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| DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS2515VPN 15 V low VCE(sat) NPN/PNP transistor Product data sheet Supersedes data of 2001 Nov 07 2005 Jan 11 NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor FEATURES * 300 mW total power dissipation * Very small 1.6 x 1.2 mm ultra thin package * Excellent coplanarity due to straight leads * Low collector-emitter saturation voltage * High current capability * Improved thermal behaviour due to flat lead * Replaces two SC75/SC89 packaged low VCEsat transistors on same PCB area * Reduces required PCB area * Reduced pick and place costs. APPLICATION * General purpose switching and muting * Low frequency driver circuits * LCD backlighting * Audio frequency general purpose amplifier applications * Battery driven equipment (mobile phones, video cameras and hand-held devices). handbook, halfpage 6 PBSS2515VPN QUICK REFERENCE DATA SYMBOL VCEO ICM RCEsat PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX. 15 1 <500 UNIT V A m 5 4 6 5 4 TR2 TR1 DESCRIPTION NPN/PNP low VCEsat transistor pair in a SOT666 plastic package. MARKING TYPE NUMBER PBSS2515VPN ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS2515VPN - DESCRIPTION plastic surface mounted package; 6 leads VERSION SOT666 MARKING CODE N8 Fig.1 Simplified outline (SOT666) and symbol. 1 Top view 2 3 1 MAM443 2 3 2005 Jan 11 2 NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS - - - - - - Tamb 25 C; note 1 - -65 - -65 Tamb 25 C; note 1 - PBSS2515VPN MIN. MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Per device Ptot Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Notes 1. Transistor mounted on an FR4 printed-circuit board. 2. The only recommended soldering method is reflow soldering. PARAMETER thermal resistance from junction to ambient CONDITIONS notes 1 and 2 VALUE 416 UNIT K/W total power dissipation 300 mW collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open emitter open base open collector 15 15 6 500 1 100 200 +150 150 +150 V V V mA A mA mW C C C 2005 Jan 11 3 NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. - - - 200 150 90 - - - - - - PBSS2515VPN TYP. - - - - - - - - - 300 - - MAX. UNIT Per transistor; for the PNP transistor with negative polarity ICBO IEBO hFE collector-base cut-off current emitter-base cut-off current DC current gain VCB = 15 V; IE = 0 A VCB = 15 V; IE = 0 A; Tj = 150 C VEB = 5 V; IC = 0 A VCE = 2 V; IC = 10 mA VCE = 2 V; IC = 100 mA; note 1 VCE = 2 V; IC = 500 mA; note 1 VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA IC = 200 mA; IB = 10 mA IC = 500 mA; IB = 50 mA; note 1 RCEsat VBEsat VBE fT Cc fT Cc Note 1. Pulse test: tp 300 s; 0.02. equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage IC = 500 mA; IB = 50 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 VCE = 2 V; IC = 100 mA; note 1 IC = 100 mA; VCE = 5 V; f = 100 MHz VCB = 10 V; IE = Ie = 0 A; f = 1MHz IC = -100 mA; VCE = -5 V; f = 100 MHz VCB = -10 V; IE = Ie = 0 A; f = 1MHz 100 50 100 - - - 25 150 250 <500 1.1 0.9 - 6 - 10 mV mV mV m V V nA A nA NPN transistor transition frequency collector capacitance 250 - 420 4.4 MHz pF PNP transistor transition frequency collector capacitance 100 - 280 - MHz pF 2005 Jan 11 4 NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor PBSS2515VPN handbook, halfpage (1) 600 MLD643 handbook, halfpage 1200 VBE 1000 MLD645 hFE (mV) 400 (2) (1) 800 (2) 600 200 (3) (3) 400 0 10-1 1 10 102 IC (mA) 103 200 10-1 1 10 102 IC (mA) 103 TR1 (NPN) VCE = 2 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. TR1 (NPN) VCE = 2 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.2 DC current gain as a function of collector current; typical values. Fig.3 Base-emitter voltage as a function of collector current; typical values. 103 handbook, halfpage VCEsat (mV) 102 MLD647 handbook, halfpage 1200 MLD646 VBEsat (mV) 1000 (1) 800 (2) (1) (2) 600 10 (3) (3) 400 1 10-1 1 10 102 IC (mA) 103 200 10-1 1 10 102 IC (mA) 103 TR1 (NPN) IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. TR1 (NPN) IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2005 Jan 11 5 NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor PBSS2515VPN 102 handbook, halfpage RCEsat () 10 (1) (2) MLD648 handbook, halfpage 1200 MLD644 IC (mA) 800 (4) (3) (2) (1) (5) (6) (7) (8) (3) 1 400 (9) (10) 10-1 10-1 1 10 102 IC (mA) 103 0 0 2 4 6 8 10 VCE (V) TR1 (NPN) Tamb = 25 C. IB = 4.6 mA. IB = 4.14 mA. IB = 3.68 mA. IB = 3.22 mA. (5) IB = 2.76 mA. (1) (2) (3) (4) (6) IB = 2.3 mA. (7) IB = 1.84 mA. (8) IB = 1.38 mA. (9) IB = 0.92 mA. (10) IB = 0.46 mA. TR1 (NPN) IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.6 Equivalent on-resistance as a function of collector current; typical values. Fig.7 Collector current as a function of collector-emitter voltage; typical values. 2005 Jan 11 6 NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor PBSS2515VPN handbook, halfpage 600 MLD649 handbook, halfpage -1200 VBE (mV) -1000 MLD651 hFE (1) 400 -800 (1) (2) (2) -600 200 (3) (3) -400 0 -10-1 -1 -10 -103 -102 IC (mA) -200 -10-1 -1 -10 -102 -103 IC (mA) TR2 (PNP) VCE = -2 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. TR2 (PNP) VCE = -2 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.8 DC current gain as a function of collector current; typical values. Fig.9 Base-emitter voltage as a function of collector current; typical values. -103 handbook, halfpage VCEsat (mV) -102 (2) (1) MLD653 handbook, halfpage -1200 MLD652 VBEsat (mV) -1000 (1) -800 (2) -10 (3) -600 (3) -400 -1 -10-1 -1 -10 -102 IC (mA) -103 -200 -10-1 -1 -10 -102 -103 IC (mA) TR2 (PNP) IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. TR2 (PNP) IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.10 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.11 Base-emitter saturation voltage as a function of collector current; typical values. 2005 Jan 11 7 NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor PBSS2515VPN 103 handbook, halfpage RCEsat () 102 MLD654 handbook, halfpage -1200 IC (mA) -800 MLD650 (4) (3) (2) (1) (5) (6) (7) 10 (8) -400 1 (2) (1) (3) (9) (10) 10-1 -10-1 -1 -10 -102 -103 IC (mA) 0 0 -2 -4 -6 -8 -10 VCE (V) TR2 (PNP) Tamb = 25 C. (1) (2) (3) (4) IB = -7 mA. IB = -6.3 mA. IB = -5.6 mA. IB = -4.9 mA. (5) IB = -4.2 mA. (6) IB = -3.5 mA. (7) IB = -2.8 mA. (8) IB = -2.1 mA. (9) IB = -1.4 mA. (10) IB = -0.7 mA. TR2 (PNP) IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.12 Equivalent on-resistance as a function of collector current; typical values. Fig.13 Collector current as a function of collector-emitter voltage; typical values. 2005 Jan 11 8 NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor PACKAGE OUTLINE Plastic surface-mounted package; 6 leads PBSS2515VPN SOT666 D A E X S YS HE 6 5 4 pin 1 index A 1 e1 e 2 bp 3 wMA Lp detail X c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.27 0.17 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1 OUTLINE VERSION SOT666 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 2005 Jan 11 9 NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production DEFINITION PBSS2515VPN This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2005 Jan 11 10 above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com (c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/03/pp11 Date of release: 2005 Jan 11 Document order number: 9397 750 14429 |
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